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191 / 2023-10-20 19:19:34
A Gate Current Detection for Short-Circuit Protection of SiC MOSFET
Short-circuit Protection, Hard Switching Fault, Fault Under Load
2.Power electronic technology and application > (4)、Wide bandgap semiconductor technology
Final Paper
Bo Hu / Hunan University
Zipeng Ke / Hunan University
Minmin He / Hunan University of Electrical and Information Engineering
Chao Zhang / Guizhou University
Zeng Liu / Hunan University
Jun Wang / Hunan University
Short-circuit (SC) protection is critical to realize the normal operation of power devices. However, existing SC detection methods have the disadvantages of slow speed and limited application range. This paper presents a gate current IG detection method to realize SC protection, which with the advantages of fast and simple. It has great applicability and can be applied to both 3-pin and 4-pin devices, moreover, it can both achieve hard switching fault (HSF) and fault under load (FUL). An experimental platform is set up to test the proposed short-circuit detection method. The experiment verifies that the proposed short-circuit detection method can be applied not only to HSF (137ns), but also to FUL (86ns).

 
Important Date

  • Conference Date

    Dec 08

    2023

    to

    Dec 10

    2023

  • Nov 01 2023

    Draft paper submission deadline

  • Dec 10 2023

    Registration deadline

Sponsored By
IEEE IAS
Organized By
Southwest Jiaotong University (SWJTU)
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