4th China International Youth Conference on Electrical Engineering (CIYCEE 2023)

Presence of interfacial thermal resistance between semiconductor devices and thermal interface material significantly impacts the heat dissipation efficiency in power device packages. In this study, we propose a novel experimental method for extracting the interfacial thermal resistance of polymer/semiconductor interface using optical-interference contactless thermometry. SU-8/SiC bilayer samples were used to demonstrate the proposed technique, and extracted interfacial thermal resistance was found to increase with the temperature of SU-8 around interface from 130 mm²KW^-1 at 304 K to 410 mm²KW^-1 at 363 K. Transient temperature profiles of the sample were also obtained and an increasing interfacial temperature drop due to interfacial thermal resistance from ~6 to ~60 K was observed.

semiconductor power device,thermal interface material,interfacial thermal resistance