The 9th International Conference on Surface Engineering (ICSE 2024)

The third generation of semiconductor high-power electronic devices, represented by silicon carbide (SiC), is one of the fastest-growing power semiconductor devices in the field of power electronics. However, as an inherently hydrophilic material, it is prone to dirt accumulation and low-temperature icing, which limits its applications. In this work, multi-scale micro-nano structures were successfully fabricated on the surfaces of SiC samples through a laser ablation-silicone oil-heat treatment (LASH) composite surface functionalization process, and the effects of the laser processing parameters, as well as the content of carbon (C) and oxygen (O) elements on controlling its surface wettability were investigated. The experimental results demonstrate that the superhydrophobic SiC surface can significantly prolong the freezing time at low temperatures and lower the freezing point. This could potentially broaden the applications of silicon carbide across various fields.