The 8th International Conference on Matter and Radiation at Extremes (ICMRE2025)

We report a systematic study of MoS₂ under high pressure, leading to the discovery of pressure-induced reversible isostructural phase transitions without symmetry breaking. Concurrent with isostructural transitions, a semiconductor-to-metal transition is observed, due to the overlap of valence and conduction bands owing to strong interlayer interaction and charge redistribution across van der Waals gap under pressure. Our study on continuous pressure-tuning of crystal and electronic structure in MoS₂ will play a vital role in the development of the next generation devices involving coupling of structural, optical, and electrical properties of TMDs and other layered materials.
 

Transition metal dichalcogenide,high,metal,iso