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Degradation Monitoring and its Mechanism Analysis of SiC Power MOSFETs Subjected to Repetitive Surge Stress on the Base of Current Transient Feature
ID：70 View Protection：ATTENDEE Updated Time：2025-11-03 11:25:39 Hits：436 Oral Presentation

Start Time：2025-11-09 10:50（Asia/Shanghai）

Duration：15min

Session：S2 2. Power electronics technology and application » S22.Power electronics technology and application

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Abstract
In this paper, a degradation monitoring method based on the current switching rate of SiC power MOSFETs in power supplies is proposed. Theoretical analysis establishes a correlation between the degradation of transconductance in SiC power MOSFETs and current transient characteristics. The impact of degradation is observed through the output voltage of a current switching rate sensor in a non-invasive manner. Degraded devices are subjected to repetitive surge current stress, and an experimental platform based on a BOOST circuit simulates real operating conditions. Comparative analysis of the turn-on current switching rate characteristics before and after degradation reveals a significant reduction in the peak value of the current switching rate following surge current stress. The results demonstrate that the current switching rate can effectively reflect device degradation and can serve as an early indicator for online monitoring of chip and package degradation in SiC power MOSFETs.
 
Keywords
SiC power MOSFETs, health condition monitoring, surge current.
Speaker
Fanyi Yang
China Electronic Product Reliability and Environmental Testing Research Institute

Submission Author
帆一 杨 广东工业大学
文杰 周 工业和信息化部电子第五研究所
义强 陈 The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology
登云 雷 广东工业大学
波 侯 工业和信息化部电子第五研究所
文睿 吴 广东工业大学
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Important Date

  • Conference Date

    Nov 07

    2025

    to

    Nov 09

    2025

  • Oct 30 2025

    Draft paper submission deadline

  • Nov 10 2025

    Registration deadline

Sponsored By
IEEE西南交通大学IAS学生分会
Organized By
西南交通大学电气工程学院
SPACI车网关系研究室
四川大学电力系统稳定与高压直流输电研究团队
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