2014 IEEE Global High Tech Congress on Electronics (GHTCE 2014)

156 / 1971-01-01 00:00:00

Design Of C-band Transmitter Front-end

CMOS,up-conversion,balun,power amplifier

This paper presents a C-band transmitter front-end. The front-end circuits include up-conversion mixer, lattice-type LC balun, class AB power amplifier, LO-S2D balun and poly-phase filter. The chip is designed in 0.18μm CMOS technology. The post-simulation results show the voltage gain is 12.57-13.76dB at 5.2-5.9GHz under 3.3V power supply, the OP1dB is 11.31dBm, the S11 of LO port is under -17.92dB, the S22 of RF port is under -18.44dB, the LO-RF isolation is 28.76dBc and the sum-frequency rejection is 46.37dBc. This design has prevailed for its relatively high sideband rejection.