The 4th International Symposium on Project Management (ISPM 2016)

227 / 2016-07-04 12:20:55

Mechanism Simulation of Integrated Circuit Interconnection Electromigration Failure

10779,10780,10781,10782

The existing life prediction model does not reflect the degradation law of the electrical properties of the interconnect during electromigration process, so there are great limitations in its practical application. This research developed a new failure mechanism degradation model to describe the law of the interconnect performance degradation in the process of electromigration. This paper takes operational amplifier as an example to achieve the failure mechanism injection of the integrated circuit. Through the simulation, this paper shows how the response characteristics of all the measurable signal nodes of the integrated circuit changes with the occurrence and development of electromigration, and meanwhile provides technical support for circuit fault diagnosis and prediction.