27th International Conference on Atomic Collisions in Solids (ICACS)

1 / 2016-04-04 05:48:42

Growing zirconium carbide (ZrC) layers by CVD at Temperature between 1200 and 1500℃ and calculate deposition rate

9684,9685,9686,9834

Zirconium carbide (ZrC) layers were grown on graphite substrate by chemical vapor deposition (CVD) using zirconium tetrachloride (ZrCl4) and methane (CH4), hydrogen (H2) and argon (Ar) as precursors. The layers were deposited at 1200, and 1500 ℃ in atmosphere pressure.The growth rate of ZrC layers as a function of temperature was investigated. The morphology of ZrC layers on graphite substrates were observed by scanning electron microscopy (SEM) and (EDS). The thickness of the layers was directly measured by SEM. The phases of the layers were characterized by X-ray diffraction (XRD). The results indicated that the deposition of ZrC was dominated by gas nucleation. The deposition morphologies and the deposition rates were studied at different temperatures to understand the deposition mechanisms.