High mobility and broad spectral responsivity thin film transistors with ultrathin niobium-doped indium oxide channel layer
ID:200 View Protection:PUBLIC Updated Time:2023-12-14 17:27:34 Hits:1525 Oral Presentation

Start Time:2021-06-29 12:25(Asia/Shanghai)

Duration:20min

Session:C Session C » C1Session block C-1

Abstract
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Speaker
陈亦哲
工程师 中国科学院武汉病毒研究所

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