Abstract Details
  1. Home
  2. Abstract List
  3. Abstract Details
396 / 2017-04-25 11:45:11
Investigation into Reliability Assessment of Power Semiconductor for Hybrid DC Switch Application
hybrid DC switch,reliability assessment,power semiconductor,junction temperature,thermo-sensitive electrical parameters
Plenary track
Draft Accepted
Jingcun LIU / Xi'an Jiaotong University
Guogang ZHANG / Xi’an Jiaotong University
Qian CHEN / Xi’an Jiaotong University
Lu QI / Xi’an Jiaotong University
Zheng QIN / Xi’an Jiaotong University
Jianhua Wang / Xi'an Jiaotong University
This paper aims at reliability assessment of power semiconductor in hybrid DC switch. Specific focus is given to temperature measurement of power semiconductor during turn-off via thermo-sensitive electrical parameters. VCE, td(off), and dVCE/dt of IGBT are proposed as the indicator and calibrated. Comparative experiments with thermistor during hybrid DC switch breaking prove the validation of the method.
Important Date

  • Conference Date

    Oct 22

    2017

    to

    Oct 25

    2017

  • Jan 04 2017

    Abstract Notification of Acceptance

  • Mar 10 2017

    Draft Paper Acceptance Notification

  • Jun 30 2017

    Final Paper Deadline

  • Oct 25 2017

    Registration deadline

Contact Information
  • ice********
  • +86*********
Login to view full contact details
Previous Conferences