International Conference on Extreme Ultraviolet Lithography 2017

Despite two generations of EUVL tools is in the field, strong progress in EUV sources, and chip manufacturers announcing plans for EUVL production, many challenges still remain in meeting HVM productivity and yield targets for the 7 nm technology node. In particular:

• Meeting productivity and availability targets for HVM, especially for the EUV source

• Simultaneously meeting resist targets for resolution, variability/stochastics, and sensitivity

• Mature pellicle technology

• Mask defectivity and lifetime

• Patterned mask inspection.

Extension of EUVL to the 5 nm technology node and beyond will further require new innovations and breakthroughs in a variety of areas including:

• Greater than 500W light sources including XFEL

• Novel mask materials, both absorber and multilayers, addressing 3D and high NA effects

• Novel patterning and processing materials addressing stochastics and variability

• Resolution extension (High NA, multiple patterning, beyond EUV, …).

Abstracts are being solicited for all topics related to the HVM introduction and extendibility of EUVL. General topic categories of interest include:

• EUV integration in manufacturing (EI)

• EUV tools, including sources and optics(ET)

• EUV masks, mask inspection/repair and review (MA)

• EUV pellicles, mask cleaning and thermal expansion (PE)

• EUV resist materials/process and contamination (RE)

• EUV patterning and process enhancement (EP)

• EUV lithography extendibility (EE).