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226 / 2017-11-22 02:48:01
High Performance Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Diffusion-Controlled Interface Oxidation Technique
AlGaN/GaN,interface engineering,diffusion-controlled oxidation,normally-off,Deal-Grove model
Plenary track > Gate dielectrics and surface passivation
Final Paper
Jiejie Zhu / Xidian University
Important Date

  • Conference Date

    May 17

    2018

    to

    May 19

    2018

  • Dec 08 2017

    Abstract Submission Deadline

  • Jan 30 2018

    Abstract Notification of Acceptance

  • Feb 10 2018

    Draft paper submission deadline

  • Feb 10 2018

    Final Paper Deadline

  • May 19 2018

    Registration deadline

Sponsored By
IEEE
Organized By
Xi'an Jiaotong University
Xidian University
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