Abstract List
My Submissions
325
AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaO x as Gate DielectricFinal Paper

Sichao Li, Qianlan Hu, Xin Wang, Mengfei Wang, Yanqing Wu*

Plenary Track > Gate dielectrics and surface passivation

238
A novel Nitrogen Passivation method for improving the SiO2/SiC interface propertiesFinal Paper

Qingwen Song*, TANG Guannan, Xiao-Yan Tang, JIA Yifan, ZHANG Yuming, ZHANG Yimen

Plenary Track > Gate dielectrics and surface passivation

236
Study on interfacial properties of SiC MOS with BariumFinal Paper

Jia-Min Jie, Xiao-Yan Tang*, Yu-Ming Zhang, Yi-Fan Jia

Plenary Track > Gate dielectrics and surface passivation

226
High Performance Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Diffusion-Controlled Interface Oxidation TechniqueFinal Paper

Jiejie Zhu*

Plenary Track > Gate dielectrics and surface passivation

    4 Records 1/1
Important Date

  • Conference Date

    May 17

    2018

    to

    May 19

    2018

  • Dec 08 2017

    Abstract Submission Deadline

  • Jan 30 2018

    Abstract Notification of Acceptance

  • Feb 10 2018

    Draft paper submission deadline

  • Feb 10 2018

    Final Paper Deadline

  • May 19 2018

    Registration deadline

Sponsored By
IEEE
Organized By
Xi'an Jiaotong University
Xidian University
Contact Information
Login to view full contact details
Previous Conferences