IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

296 / 2017-12-07 22:13:32

Proton Irradiation Effects on High Voltage 4H-SiC Junction Barrier Schottky Diodes

Plenary track > Harsh environment (e.g. high temperature) operation and reliability

High voltage 4H-SiC Junction barrier Schottky (JBS) diodes were irradiated by 5MeV protons with different fluences. The forward and reverse breakdown performance of the investigated devices were measured before and after irradiation. Results shows that the protons irradiation will cause the increase of specific on-resistance, indicating displacement damage leads to the defects into the n-type drift region of the device. It is interesting found that the ▽VBR increased with the increase of the fluence until up to 5×1013cm-2, but for higher fluence, they begin to decrease as the increase of fluence. Finally the unipolar figure of merit (FOM) of the irradiated device are calculated, which reveal that although the forward and breakdown characteristics degrade after the proton irradiation, the performance of the high voltage 4H-SiC JBS remain superior to that of the best available unirradiated high voltage Si devices up until a fluence of 5×1013cm-2.