IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

304 / 2017-12-08 09:52:06

A 10kV 4H-SiC PiN Diode with Gradual Doping Buffer Layers and p+ Adjusting Regions at Cathode

4H-SiC，PiN Diode，adjusting region，gradual varied doping

Plenary track > Device structures and fabrication techniques

This paper presents a novel 4H-SiC PiN Diode with gradual doping n-buffer layers and p+ adjusting regions to improve the relation between on-state and reverse recovery characteristics at 10kV class. Compared with the conventional SiC PiN diode with homogeneous doping n-buffer layer, the novel structure shows about 275% increment in softness factor. Even under the overstress condition, the novel structure does not show the current voltage oscillation. And the on-state forward voltage drop just increases by 0.3V at 100A/cm2. Finally, the width ratio of p+ and n+ regions at cathode side are optimized to obtain the more uniform current distribution during conducting.