IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

A new termination structure with FLR and trench for 3.3kV SiC PiN diodeFinal Paper

Wang cailin*

Plenary Track > Device structures and fabrication techniques

High-Voltage 4H-SiC GTO Thyristor with Multiple Floating Zone Junction Termination ExtensionFinal Paper

Xingliang Xu*, Kun Zhou, Lin Zhang, Zhiqiang Li, Chengquan Xiao, Lianghui Li, Juntao Li, Gang Dai

Plenary Track > Device structures and fabrication techniques

A 10kV 4H-SiC PiN Diode with Gradual Doping Buffer Layers and p+ Adjusting Regions at CathodeFinal Paper

Wang cailin*

Plenary Track > Device structures and fabrication techniques

High Breakdown Field AlGaN/GaN HEMT with AlN Super Back BarrierFinal Paper

Yanmin Guo, Yulong Fang*, Jiayun Yin, Bo Wang, Zhirong Zhang, Jia Li, Weili Lu, Nan Gao, Zhihong Feng

Plenary Track > Device structures and fabrication techniques

SiC Trench IGBT with a UV-Shaped GateFinal Paper

Zhengxin Wen, Feng Zhang*, Zhanwei Shen, Guoguo Yan, Xingfang Liu, Guosheng Sun, Yiping Zeng

Plenary Track > Device structures and fabrication techniques

Demonstration of GaN pn junction by implanting fluorine ions into free-standing bulk substrate n-GaNFinal Paper

Plenary Track > Device structures and fabrication techniques

Study on the New Structure of SiGe HBT with Field PlateFinal Paper

Plenary Track > Device structures and fabrication techniques

A Near Ideal Edge Termination Technique for Ultrahigh-Voltage 4H-SiC Devices with Multi-Zone Gradient Field Limiting RingFinal Paper

Xiaochuan Deng*

Plenary Track > Device structures and fabrication techniques

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMTFinal Paper

Bin Hou*

Plenary Track > Device structures and fabrication techniques

Simulation Study Of An Injection Enhanced SiC IGBTFinal Paper

Shan Jiang, Xiao-Yan Tang*, Qingwen Song, Yuming ZHANG

Plenary Track > Device structures and fabrication techniques

Improved fmax and breakdown voltage in AlGaN/GaN HEMT with plasma treatmentFinal Paper

MINHAN MI*

Plenary Track > Device structures and fabrication techniques

Low temperature epitaxial deposition of GaN layers on sitall ceramic substratesFinal Paper

Dimiter Alexandrov et. all.*

Plenary Track > Device structures and fabrication techniques

Fully recessed-gate normally-off AlGaN/GaN high electron mobility transistors with high breakdown electric fieldFinal Paper

Yun-Long He*

Plenary Track > Device structures and fabrication techniques

Enhanced DC and RF Characteristics in E∕D-mode AlGaN∕GaN HEMTs by TiN-based source contact technologyFinal Paper

Ling Yang*

Plenary Track > Device structures and fabrication techniques

Vertical GaN MOSFETs with Over 1.6 kV breakdown voltage :A theoretical studyingFinal Paper

yanni Zhang, zhiyu Lin*, dai Yang*, jincheng Zhang

Plenary Track > Device structures and fabrication techniques