The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

371 / 2019-01-21 20:15:32

Effect of thermal stress on the electrical properties of TSV inductor

thermal stress; TSV inductor； silicon substrate resistivity; electrical properties

Plenary track > Nanoelectronics

the interaction between multiple fields always have a certain degree of influence on the design of through-silicon via (TSV) structures. In this paper, HFSS is used to build the inductor model. Thermal stress is obtained through ANSYS static structural module and the substrate resistivity is calculated. Then the changed resistivity is input into HFSS to simulate the electrical properties of the TSV spiral inductor. It is proved quantitatively that the electrical properties of TSV inductors are greatly affected by thermal stress changing silicon substrate resistivity.