Abstract List
My SubmissionsEnhanced Interfacial Characteristics of Atomic Layer Deposited LaAlO3 Thin FilmsFinal Paper
Xing Wang*
Plenary Track > Nanoelectronics
Graphene synaptic transistor based on Ion-Gel dielectricFinal Paper
Lin Chen, Chenrong Gong, Guohe Zhang*, Chuanyu Han, Xin Li, Weihua Liu
Plenary Track > Nanoelectronics
Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels via O2 Plasma TreatmentFinal Paper
Qian Ma*, Letao Zhang, Shengdong Zhang
Plenary Track > Nanoelectronics
High Performance W/n-Si Schottky Diode using Black Phosphorus as an Interlayer.Final Paper
Priyanka Kumari*, V. Ramgopal Rao
Plenary Track > Nanoelectronics
Magnetic Properties of Transition Metal Doped 3C-SiC Nanowires Based on First Principles CalculationFinal Paper
JIANING SU, YING YANG*, SHAOHUAN NING
Plenary Track > Nanoelectronics
Influence of a Novel 2D Material MXene on the Behavior of Memristor and Its Crossbar ArrayFinal Paper
Nan He, Yi Tong*, Xinwei Liu, Fei Gao, Yu Wang, Miaocheng Zhang, Xinyi Shen, Ertao Hu, Xiang Wan, Xiao Gong, Lin He, Xiaojuan Lian
Plenary Track > Nanoelectronics
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectricFinal Paper
Xu Jingping*, xinyuan zhao, liu lu, Lai P.T, Tang W.M, hui su
Plenary Track > Nanoelectronics
The Properties of Surface Passivated PbS Quantum DotsFinal Paper
Chunlan Chen, Hongbin Pu*, Yingxiang Yang, Min Wang, Xiaomin He
Plenary Track > Nanoelectronics
Preparation of SiC/SiNWs heterostructure on 4H-SiC(0001)Final Paper
yuan zang, LianBi Li*
Plenary Track > Nanoelectronics
Tunneling Leakage Current of Gate-All-Around Nanowire Junctionless Transistor with an Auxiliary GateFinal Paper
Linyuan Zhao*, Wenjie Chen, Renrong Liang, Yu Liu, Jun Xu
Plenary Track > Nanoelectronics
Quantum Confinement Effects and Electrostatics of Planar Nano-scale Symmetric Double-Gate SOI MOSFETsFinal Paper
Aditya Sankar Medury*, Harshit Kansal
Plenary Track > Nanoelectronics
Static thermal simulation of Heterogeneous InP-Silicon 3D IC StackFinal Paper
Yang yanhui, Zhang yi*
Plenary Track > Nanoelectronics
High Crystalline Quality of Si0.5Ge0.5 Layer Grown on a Novel Three-layer Strain Relaxed BufferFinal Paper
Zhiqian Zhao, Yongliang Li*, Wenwu Wang
Plenary Track > Nanoelectronics
Low-temperature electrical characterization of p- and n-type MoTe2 transistorsFinal Paper
Wenjie Chen*, Renrong Liang, Jun Xu
Plenary Track > Nanoelectronics
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
-
2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
