The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

557 / 2019-03-14 20:45:37

Quantum Confinement Effects and Electrostatics of Planar Nano-scale Symmetric Double-Gate SOI MOSFETs

Quantum Confinement Effects, wave-function, Electrostatics

Plenary track > Nanoelectronics

The effects of quantum confinement on the charge distribution in planar Double-Gate (DG) SOI (Silicon-on-Insulator) MOSFETs were examined for sub-10 nm SOI film thicknesses, by modeling the potential experienced by the charge carriers as that of an an-harmonic oscillator potential, consistent with the inherent structural symmetry of nanoscale symmetric DGSOI MOSFETs. By solving the 1-D Poisson's equation using this potential, the results obtained were validated through comparisons with TCAD simulations. The present model satisfactorily predicted the electron density and channel charge density for a wide range of SOI channel thicknesses and gate voltages.