The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

580 / 2019-03-15 14:31:59

Preparation of SiC/SiNWs heterostructure on 4H-SiC(0001)

4H-SiC,nanowires,heterostructure

Plenary track > Nanoelectronics

Silicon nanowires can be used as the visible light-near infrared absorber layer in SiC/SiNWs heterostructure to solve the problem which SiC optoelectronic devices cannot operate by visible and near-infrared lights. In this structure, a SiNWs layer is prepared on 4H-SiC substrate by Au-catalyzed gas-liquid-solid mechanism chemical vapor deposition method. Raman spectra indicate that with the growth time of SiNWs increases, red shift and asymmetric broadening occurs at the low frequency end. XRD shows that the main structure of SiNWs is amorphous, and growth preferentially along <111> direction.