Abstract Details
630 / 2019-03-18 14:17:44
High Performance W/n-Si Schottky Diode using Black Phosphorus as an Interlayer.
Schottky barrier height (SBH),Schottky diode,Black phosphorous,ideality factor
Final Paper
The novel application of mechanically exfoliated Black Phosphorus (BP) as an interlayer is explored for the first time in W/n-Si Schottky barrier diode (SBD). The SBD performance was significantly enhanced with an increase in Schottky barrier height from ~0.48 eV to ~0.59 eV, improvement in ideality factor from ~2 to ~1 and increase in ON/OFF ratio from ~102 to ~105 with BP interlayer at room temperature. The performance enhancement was found to be across a wide temperature range from 298K to 398K.
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Xi'an University of Technology
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
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2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
