The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

460 / 2019-02-27 20:08:13

Low-temperature electrical characterization of p- and n-type MoTe2 transistors

electrical characterization,low-temperature,MoTe2 transistors

Plenary track > Nanoelectronics

We have fabricated high performance p- and n-type molybdenum ditelluride (MoTe2) transistors and demonstrated their temperature dependent characteristics. The carrier mobility increases and the absolute value of threshold voltage decreases with the rise of temperature for both p- and n-type MoTe2 transistors. Furthermore, the slopes of threshold voltage shift with temperature are estimated to be 171 mV/K and 71 mV/K for p- and n-type MoTe2 transistors, respectively. The large difference results from their different carrier transport mechanisms. These results open opportunities to facilitate the development of high-performance functional devices based on two-dimensional layered semiconductors in the future.