The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

675 / 2019-04-17 22:10:04

Enhanced Interfacial Characteristics of Atomic Layer Deposited LaAlO3 Thin Films

atomic layer deposition

Plenary track > Nanoelectronics

The enhanced interfacial characteristics of
atomic layer deposited LaAlO3 thin films are investigated in
this paper. Firstly, the impact of stress relieved preoxide
(SRPO) interface engineering on the physical and electrical
properties of LaAlO3 films is investigated. The SRPO
pretreatment has little influence on the surface morphology of
LaAlO3 films and the chemical bond composition of LaAlO3/Si
interface. The SRPO pretreated MIS capacitor displays
obvious improvement in decreasing the amount of trapped
oxide charges and interfacial traps, which decreases the gate
leakage current and improves the breakdown characteristics.
Then, the influence of a remote interfacial layer (IL)
scavenging method on the interfacial characteristics of LaAlO3
grown by atomic layer deposition on Si substrate is studied.
The results indicate that the IL scavenging reaction can reduce
the thickness of the interfacial layer between LaAlO3/Si
substrate. However, the existence of the IL scavenging reaction
brings in large numbers of oxygen vacancies and dangling
bonds to the LaAlO3/Si structure, which causes slight
degradation of both the gate leakage current and the
breakdown characteristics