Abstract Details
421 / 2019-02-26 13:20:32
A Novel Slope-Channel Double-Gate MOSFET for Low-Power Applications
MOSFET, double-gate, slope-channel, SCEs, subthreshold performances
Draft Rejected
Double-gate MOSFET (DG MOSFET) shows great suppression of the short channel effects (SCEs) due to the enhanced gate-control capability but requires the downscaling of channel thickness. To address these challenges, we propose a novel slope-channel double-gate MOSFET (SCDG MOSFET) to enhance the subthreshold performances while maintaining the channel thickness and the complexity of fabrication process. The simulation results show that the SCDG MOSFET greatly improves the subthreshold performances compared to the conventional DG MOSFET. The main mechanism is the reduction of channel potential attributed to the enhanced gate control capability.
Important Date
-
Conference Date
Jun 12
2019
toJun 14
2019
-
Jun 12 2019
Draft paper submission deadline
-
Jun 14 2019
Registration deadline
Organized By
Xi'an University of Technology
Contact Information
- Dr. Zhaonian Yang
- ed******@126.com
- 177********
Previous Conferences
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2025-06-06 China Yinchuan
2025 IEEE International Conference on Electron Devices and Solid-State Circuits -
2017-10-18 Taiwan, China
2017 International Conference on Electron Devices and Solid-State Circuits -
2016-08-03 Hong Kong, China Hongkong，China
2016 IEEE International Conference on Electron Devices and Solid-State Circuits -
2015-06-01 Singapore
2015 IEEE International Conference on Electron Devices and Solid-State Circuits
