The 15th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

619 / 2019-03-15 22:53:33

Effect of trench bottom implantation on the reliability of trench MOSFET

MOSFET; trench bottom implantation; reliability

Plenary track > Device and Circuit Reliability

A trench MOSFET has been formed by carrying out trench bottom implantation to improve the device reliability. By additionally implementing a region under the trench bottom, the reliability of the conventional trench MOSFET can be significantly enhanced. The peak electric field in the corner of trench bottom, which limits the reliability of the conventional trench MOSFET, can be obviously alleviated. Various implantation types and locations are compared with the conventional structure. The counter-doped region under the trench bottom has a higher breakdown voltage and lower peak electric filed than the uniform-doped region. Since the counter-doped region is added into the epilayer, on-resistance increase is cased.