China International Youth Conference on Electrical Engineering (CIYCEE 2020)

111 / 2020-09-25 22:31:44

Comparative Analysis of CM EMI for Boost Converter Using Si/SiC hybrid switch

Si/SiC hybrid switch, CM, EMI

Power Electronics Technology and Application > Power semiconductor devices, passive components, packaging, integration and materials

    The combination of the Si IGBT and SiC MOSFET inside the Si/SiC hybrid switch will bring serious conducted electromagnetic interference (EMI) noise in the application of the power converters. Compared with the differential mode (DM) EMI noise, the common mode (CM) EMI noise has a greater impact on the total conducted EMI noise, and it is relatively difficult to suppress the common mode EMI noise. However, there is still lack of research on the CM EMI emission characteristics of Si/SiC hybrid switch based converters. In this paper, the CM EMI noise caused by the Si/SiC hybrid switch, Si IGBT, and SiC MOSFET are compared at first. Then, the influence of different current ratios of the Si/SiC hybrid switch on the CM EMI is analyzed