2022 IEEE 3rd China International Youth Conference on Electrical Engineering (CIYCEE 2022)

1 / 2022-02-10 14:53:33

投稿测试

SiC MOSFET,SiC MOSFET， parasitic parameters， crosstalk suppression， Buck/Boost

Power Electronics Technology and Application > Power semiconductor devices, passive components, packaging, integration, and materials

The crosstalk voltage is the result of the combined effect of the displacement current generated by the gate-drain capacitance and the induced voltage introduced by the common source inductance. When considering common-source inductance, the relationship between the driving circuit impedance and the spikes of crosstalk voltage is no longer a single correlation. This paper starts with the crosstalk phenomenon in the double pulse test (DPT) circuit, introduces the causes of the crosstalk phenomenon in detail, and constructs the equivalent circuit of the drive loop to obtain the mathematical expression of the crosstalk voltage calculation. Finally, through mathematical analysis, the influence of gate-source capacitance and gate resistance on the spikes of crosstalk voltage is obtained, which provides guidance for the design of driving parameters.