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63 / 2022-06-28 20:31:15
A Novel IGBT with Double Buffer Layers for High Temperature Operation
Buffer Layer, deep-level impurities, high-temperature characteristics, IGBT, leakage current
Power Electronics Technology and Application > Power semiconductor devices, passive components, packaging, integration, and materials
Final Paper
Qian Zhang / Hunan University
Kai Xiao / China Southern Power Grid Extra High Voltage Power Transmission Company Maintenance Test Center
Jun Wang / Hunan University
Gaoqiang Deng / Hunan University
Shiwei Liang / Hunan University
In this paper, a novel IGBT with Double Buffer Layers (DB-IGBT) for high temperature operation is proposed and investigated. The deeper buffer layer of the DB-IGBT is doped with deep-level donor impurities to reduce the positive temperature dependence of bipolar transistor gain (αPNP). The DB-IGBT thus achieves reduced leakage current with the almost same on-state voltage (Von). Compared with the conventional trench IGBT, the leakage current and normalized leakage current of the DB-IGBT is decreased by more than 71% and 32% respectively at 200°C. While this approach is mainly aimed at reducing leakage current and its temperature dependence, the DB-IGBT also exhibits improved trade-off relationship between turn-off loss（Eoff）and Von. The short-circuit withstanding capability is also enhanced. The Double Buffer Layers offer a promising solution for high-voltage IGBTs aiming at junction temperature above 175°C.

 
Important Date

  • Conference Date

    Nov 03

    2022

    to

    Nov 05

    2022

  • Aug 01 2022

    Draft paper submission deadline

  • Nov 04 2022

    Registration deadline

  • Nov 05 2022

    Contribution Submission Deadline

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Huazhong University of Science and Technology
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