2022 International Conference on Simulation of Semiconductor Processes and Devices ( SISPAD 2022)

High-quality contributions in the following areas are solicited:

• Modeling and simulation of all types of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
• Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication
• Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
• Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
• Process/device/circuit co-simulation in context with system design and verification
• Equipment, topography, lithography modeling
• Interconnect modeling, including noise and parasitic effects
• Numerical methods and algorithms, including grid generation, user-interface, and visualization
• Metrology for the modeling of semiconductor devices and processes
• Multiscale approach from First Principles to TCAD simulations
• Estimation with TCAD and machine learning
• Neuromorphic devices and quantum computing
• Multi-physics simulation