2016 International Conference on Ultimate Integration on Silicon (ULIS 2016)

Topics include, but are not limited to

1. Advanced SOI materials and wafers
2. New channel materials for CMOS: strained Si, strained SOI, SiGe, GeOI, III-V and high mobility materials on insulator; carbon nanotubes; graphene and other 2D materials
3. Properties of ultra-thin films and buried oxides, defects, interface quality
4. Thin gate dielectrics: high-k materials for switches and memory
5. Nanometer scale devices: technology, characterization techniques and evaluation metrics for high performance, low power, low standby power, high frequency and memory (DRAM, Non-Volatile, SRAM, ReRAM...) applications
6. Physics mechanisms and innovative SOI-like devices
7. Alternative transistor architectures including FDSOI, DGSOI, FinFET, MuGFET, vertical MOSFET, Nanowires, FeFET and tunnel FET structures, MEMS/NEMS, Beyond-CMOS nanodevices
8. New functionalities in silicon-compatible nanostructures and innovative devices representing the More than Moore domain for Sensing, Energy harvesting, RF, High voltage, Imagers, Electronic cooling, etc.
9. CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling
10. Three-dimensional integration of devices and circuits, heterogeneous integration
11. Transport phenomena, compact modeling, device simulation, front- and back-end fabrication process simulation
12. Advanced test structures and characterization techniques, parameter extraction, reliability and variability issues for new materials and novel devices