Gordon Research Conference on Defects in Semiconductors

The functionality of semiconductor devices depends critically on dopants and defects. Therefore, a detailed understanding of their fundamental physics and chemistry is mandatory for the creation of new game-changing electronic devices. A prominent example is the development of blue light emitting diodes, which was honored with the Nobel Prize in 2014. This Gordon Research Conference is the unique biannual opportunity to discuss defects across all semiconductor materials and applications in an off-the-record format. It will bring together early career researchers and leading experts from academia, industry and national labs at the conference-friendly facilities and relaxing atmosphere of Colby-Sawyer College. The meeting will address the theoretical basics, the characterization and the utility of point, line and extended defects in a broad range of topical materials. This includes defects in wide bandgap nitride, oxide, and carbide semiconductors. Novel two-dimensional materials such as transition metal dichalcogenides and other graphene analogues will be discussed along with new materials for photovoltaics, in particular perovskites. Applications of these materials range from electronics for power generation, power distribution, and lighting to spintronics and quantum information processing. Materials relevant for photocatalysis will also be addressed. 

The Gordon Research Conference is complemented since 2014 by a highly successful Gordon Research Seminar designed by and for graduate students and post-docs. The two-day GRS precedes the GRC, acclimates young scientists to the unique style of Gordon Conferences and encourages them to share and present their ideas to their peers. GRS participants are expected to also attend the GRC.