From its beginning in 1978 as the GaAs IC symposium, the IEEE Compound Semiconductor IC Symposium (CSICS) has evolved to become the preeminent international forum for developments in compound semiconductor integrated circuits and devices, embracing GaAs, InP, GaN, SiGe, and CMOS technology. Coverage includes all aspects of the technology, from materials, device fabrication, IC design, testing, and system applications. CSICS provides the ideal forum to present the latest results in high-speed digital, analog, microwave, millimeter wave, THz, mixed-mode, and optoelectronic integrated circuits. First-time papers addressing the utilization and application of InP, GaAs, GaN, Silicon, Germanium, SiGe, and other compound.
High performance devices such as GaN power conversion devices, 700 GHz SiGe HBTs & InP HEMTs
Novel devices such as tunnel FETs (TFETs), carbon nanotubes, MEMS, graphene & diamond transistors
Integration of III-V devices on Si
Optoelectronic and photonic devices such as optical modulators, lasers, photodetectors, and Silicon Photonics
Device and circuit modeling concepts and implementation / EM and EDA tools
Thermal management technologies, thermal simulation, and advanced packaging of high-power devices and ICs
Device and IC manufacturing processes, testing methodologies, & reliability
Analog, RF, mixed-signal, mm-wave, THz, power conversion and optoelectronic circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS
Oct 22
2017
Oct 25
2017
Abstract Submission Deadline
Draft Paper Acceptance Notification
Final Paper Deadline
Registration deadline
2016-10-23 United States Austin, USA
2016 IEEE Compound Semiconductor Integrated Circuit Symposium2014-10-19 United States
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)2013-10-13 United States
2013 IEEE Compound Semiconductor Integrated Circuit Symposium
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