2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM

ANALOG/MIXED SIGNAL: Analog ICs, Mixed analog/digital ICs – Digital ICs – DACs and ADCs – Operational amplifiers – Voltage references and regulators – Integrated filters – Sensors and actuators – Networking ICs, MUX/DEMUX, Clock and data recovery, Decision circuits, Equalizers – Optical data links, Laser and modulator drivers – Gate arrays – Cell libraries – High-voltage ICs – Biomedical electronics – Power Management ICs – Energy harvesting ICs – Motor controls – Analog subsystems within a VLSI chip – Packaging of high-performance ICs.

DEVICE PHYSICS: New device physics phenomena in Si, SiGe, SiC, GaN MOS, and III-V devices – Device design issues and scaling limits – Hot electron effects and reliability physics – Transport and high field phenomena – Noise – Linearity/Distortion – Novel measurement techniques – Operation in extreme environments (low and high temperatures, radiation effects).

MODELING/SIMULATION: Improved BJT and HBT models – Behavioral modelling techniques – Parameter extraction methods and test structures – De-embedding techniques – RF and thermal simulation techniques – Modelling of passives, interconnect and packages – Statistical modelling – Device, process and circuit simulation – CAD/modelling of power devices – packaging of power devices and ESD phenomena.

PROCESS TECHNOLOGY: Advances in all aspects of BiCMOS processes and device structures – Process technology and advanced processing techniques related to SiGe heterojunction bipolar devices, Si bipolar devices, and III-V heterojunction devices – Manufacturing solutions and yield improvements for bipolar/BiCMOS – Fabrication and integration of high-performance passive components, including MEMs – Process technology for discrete and integrated bipolar/BiCMOS power devices, IGBT, RF power devices, and DMOS – Wide bandgap bipolar devices (SiC, GaN, GaAs) and related process technology – Reliability aspects of SiGe, Si, and III-V devices, especially relating to process improvements and advanced processing  techniques.

WIRELESS CIRCUITS: RF and millimeter-wave circuits and systems – THz circuits – Radio and transceiver subsystems – Low Noise Amplifiers – Automatic gain control – Mixers – Voltage controlled oscillators – Frequency synthesizers – Power amplifiers – High-speed data converters – RF switches – Suppression of noise and distortion – RF Packaging – Integrated RF passives.