Symposium ED9—Advanced Interconnects for Logic and Memory Applications—Materials, Processes and Integration

Next Generation ILD Materials New spin-on, sol-gel, and PECVD precursors; ULK synthesis and characterization; Porogens, porosity characterization, pore sealing and stuffing; Synthesis and characterization of ILD films with controlled porosity; Interface engineering: Surface treatments and controlled deposition layers to enhance adhesion and nucleation; ULK mechanical properties; Alternate curing of ULK; Advances in integration and patterning

Novel Etch Stop and Hardmask Materials New spin-on, ALD, and PECVD precursors; Low k etch stop materials; Materials with unique etch selectivity; Barrier properties; Mechanical strength and adhesion

Metallization for Advanced Interconnects Advances in CVD, PVD, ALD, electrochemical and electroless deposition; Advances in liner, Cu seed, and fill technologies; Advanced BEOL integration; Metal resistivity modeling; Alternative approaches for the tightest pitch layer; Barrier free metallization; RIE plasma processing, planarization, and cleaning technologies

Fillable Dielectrics Spin-on, Flowable CVD and ALD materials; Bottom up fill approaches; Advanced cure technology; Replacement ILD Integration

Selective Deposition Processes Deposition of Metal on Metal, Metal on Dielectric, Dielectric on Dielectric, Dielectric on Metal; Directed assembly technology; Selective surface modification for ALD and SAM deposition

BEOL Switches and Non Volatile Memory Use of BEOL interconnect materials to build novel devices; Device design, electrical testing and reliability

Alternative to Cu/ULK interconnects Air gap; Carbon-based interconnects; Optical interconnects; Nano-interconnects, including nanocontacts; Molecular self-assembling technologies