2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

The topics include, but are not limited to, the following technical areas:

1. Device Technologies: CMOS, SOI, LDMOS, SiGe, GaAs, InP, GaN, MEMS, reliability, characterization, etc.

2. Modeling and CAD: Active/Passive device modeling, CAD, EM simulation, co-simulation, etc.

3. Packaging technology: MCM, SiP, TSV, flip chip assembly, wire bonding, anisotropic conductive film, etc.

4. Passive Circuits and Antenna: on-chip antennas, integrated passive devices, ferrite, piezoelectric material, etc.

5. Frequency Generation and Conversion ICs: VCOs, PLLs, synthesizers, ADPLLs, frequency dividers/multipliers, mixers, etc.

6. Front-end RFICs: LNAs, VGAs, phase shifters, RF switches, etc.

7. Power ICs: power amplifiers, linearization circuits, drivers, etc.

8. Millimeter-wave and THz ICs: circuits operating at mm-wave (30-300 GHz) and sub-mm-wave (>300 GHz) bands.

9. Analog and Mixed Signal ICs: ADC, DAC, comparators, filters, AGC/VGA, etc.

10. High-Speed Data Transceivers: wireless/wireline/optical transceivers, CDRs for high-speed data links.

11. RF Sensor ICs: automotive radars, wearable devices, security, biomedical and healthcare applications, etc.

12. Power Transmission ICs: RFIDs, electric coupling, electromagnetic induction, magnetic resonance, wireless power transmission ICs, etc.

13. 1Emerging ICs: power management, digital RF circuits/architectures, RF BIST, reconfigurable and tunable ICs, new energy vehicle electronics EM and ICs, etc.