Symposium IV:Thin Film, Plating and Process Integration

Symposium  IV: Thin Film, Plating and Process Integration

High k gate dielectrics and metal gates thin film materials, processes and integration schemes

• Thin film processes and materials for straining engineering, including SiGe, SiC, stress liners and SMT

• Advanced channel materials, such as Ge and III/V channels, related topics and integration schemes, including Ge passivation.

• Processes, properties, integration and reliability for low k dielectric materials

• Thin film processes and materials for high aspect ration gap fill

• Self-aligned silicides, Schottky barrier source/drain and advanced contact technologies

• Cleaning technology in manufacturing

Innovative metrology for 45nm and beyond

• Electroplating and electroless deposition materials and processes

• Silicon nanowire, carbon nanotube, graphene or other new materials for FET, metallization, dielectrics, contacts, strain and channels. 

• Key process module development and integration

• Materials for 45 nm, 32 nm and 22 nm nodes of semiconductor manufacturing

• Strained silicon process and integration

• Reliability of copper/low-k interconnect

• High-k/metal gate and future transistors

• Plasma assisted material processes

• Implantation and millisecond anneal