Abstract List
My Submissions
218
A Physics-based Lumped-charge Model for SiC MPS Diode Implemented in PSPICE”Final Paper

Yaoqiang Duan, Xin Li, Yifei Luo*, BinLi Liu, Yingjie Jia

Plenary Track > Device characterization and modeling

217
Influence of Lateral Spreading of Implanted Aluminum Ions on Current-Voltage Characteristics of 6.5 kV 4H-SiC Junction Barrier Schottky DiodesFinal Paper

Liu Zheng*

Plenary Track > Device characterization and modeling

216
Measurement of Carrier Lifetime in 4H-SiC PiN Diodes Employing OCVD Method at Different TemperatureFinal Paper

lei yuan*, Yao Bing

Plenary Track > Device characterization and modeling

209
Analysis of Schottky Forward Current Transport Mechanisms in AlGaN/GaN HEMTs over a Wide Temperature RangeFinal Paper

Mei Wu*

Plenary Track > Device characterization and modeling

204
Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation LayersFinal Paper

Kazushige Horio*

Plenary Track > Device characterization and modeling

196
Automatic V-I Alignment for Switching Characterization of Wide Band Gap Power DevicesFinal Paper

Shan Yin*

Plenary Track > Device characterization and modeling

Important Date

  • Conference Date

    May 17

    2018

    to

    May 19

    2018

  • Dec 08 2017

    Abstract Submission Deadline

  • Jan 30 2018

    Abstract Notification of Acceptance

  • Feb 10 2018

    Draft paper submission deadline

  • Feb 10 2018

    Final Paper Deadline

  • May 19 2018

    Registration deadline

Sponsored By
IEEE
Organized By
Xi'an Jiaotong University
Xidian University
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