IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

A Model Parameter Optimization Method of SiC Power MOSFETFinal Paper

Yang Wen, Yang Yuan*, Wang Yan

Plenary Track > Device characterization and modeling

First-principles investigations of point defects at 4H-SiC/SiO2 interfaceFinal Paper

Chenguang Liu, Yuehu Wang*, Yutian Wang, Zhiqiang Cheng

Plenary Track > Device characterization and modeling

Substrate Termination Technique for Monolithically Integrated Lateral GaN-on-Si Power DevicesAbstract Pending

Hanyuan Zhang*

Plenary Track > Device characterization and modeling

Quantitative Analysis and Suppression Strategies of Dvdt Induced Turn-on of Cascode GaN FETs in Half-bridge CircuitsFinal Paper

Tianhua ZHU*, Fang ZHUO, Feng WANG, Hailin WANG, Xiaoping SUN, shuhuai SHI, Baohui MA

Plenary Track > Device characterization and modeling

Failure Models of SiC MOSFET and SiC JFETFinal Paper

Yuming Zhou*

Plenary Track > Device characterization and modeling

Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching LossFinal Paper

Shen Zhanwei, Zhang Feng*

Plenary Track > Device characterization and modeling

A Study of the Performances Degradation for 4H-SiC Traps-stressed UMOSFET using Experimental and Simulation MethodsFinal Paper

shen zhanwei*

Plenary Track > Device characterization and modeling

IGCT Circuit Model Based on Pspice Modeling PlatformFinal Paper

yang song , cailin wang*

Plenary Track > Device characterization and modeling

Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologiesFinal Paper

Meng Zhang*

Plenary Track > Device characterization and modeling

Influence of the oxygen in Hot-Carrier-Stress-Induced degradation in AlGaN/GaN high electron mobility transistorsFinal Paper

Lixiang Chen*

Plenary Track > Device characterization and modeling

Instability of 4H-SiC Power Device under Repetitive Avalanche Current StressFinal Paper

Plenary Track > Device characterization and modeling

Characterization of SiC MOSFET Switching PerformanceFinal Paper

Plenary Track > Device characterization and modeling

Ultralow Angle Bevel-Etched Junction Termination Extension for High Voltage SiC Power DevicesFinal Paper

Kun Zhou*, Hui Li, Qiang Li, Liang Xu, Lin Zhang, Lei Gao, Xin Cui, Long Zhang, Kun Yang, Yang Zhou, Tao Li, Gang Dai

Plenary Track > Device characterization and modeling

Current Sharing Analysis of Paralleled GaN HEMT Via Feedback TheoryFinal Paper

Mao Zhang*, Weiping Zhang

Plenary Track > Device characterization and modeling

Influence of Parasitic Capacitance on Transient Current Distribution in Paralleled SiC MOSFETsFinal Paper

Junji Ke*, Huazhen Huang, Peng Sun, James Abuogo, Zhibin Zhao, Xiang Cui

Plenary Track > Device characterization and modeling