IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

Influence of Parasitic Capacitances on Transient Current Distribution of Paralleled SiC MOSFETsFinal Paper

Junji Ke*, Huazhen Huang, Peng Sun, James Abuogo, Xiang Cui, Zhibin Zhao

Plenary Track > Device characterization and modeling

Three-phase Four-switch APF Model Predictive Control Based on Harmonic Free DetectionAbstract Pending

YANG Li-xing*, CAI Xia, WANG Ying, HUANG Wei, TANG Zhen-hua, LUO Di

Plenary Track > Device characterization and modeling

Error Analysis of Coaxial Shunt under AC DisturbanceFinal Paper

Chong Zhang*, Jing Wu, Qishuang Ma, Haiming Shao

Plenary Track > Device characterization and modeling

Temperature Dependence of 1.2 kV 4H-SiC Power MOSFET Body Diode over Temperature Range of 90K to 603KFinal Paper

Jinwei Qi*, Kai Tian, Zhangsong Mao, Song Yang, Wenjie Song, Anping Zhang

Plenary Track > Device characterization and modeling

DC and RF characteristics improvement of Enhancement/Depletetion-mode AlGaN/GaN HEMTs by TiN-based source ledge technologyAbstract Pending

Plenary Track > Device characterization and modeling

On the Static Performance of Commercial GaN-on-Si Devices at Elevated TemperaturesFinal Paper

Samuel Perkins*, Anastasios Arvanitopoulos, Konstantinos Gyftakis, Neophytos Lophitis

Plenary Track > Device characterization and modeling

Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier DiodesFinal Paper

Anastasios Arvanitopoulos*, Neophytos Lophitis, Mike Jennings, Konstantinos Gyftakis, Marina Antoniou, Samuel Perkins

Plenary Track > Device characterization and modeling

Gallium Nitride Power Device Modelling using Deep Feed Forward Neural NetworksFinal Paper

Nikita Hari*, Soham Chatterjee, Archana Iyer

Plenary Track > Device characterization and modeling

General Modeling and Loss Prediction of SiC Power ModuleFinal Paper

ZhiDa Zhou, Qiongxuan Ge*, Lu Zhao, Bo Yang

Plenary Track > Device characterization and modeling

Obtaining the Exact Electrical Parameters of Ohmic Contacts using a Novel Electrode Pairs (EPs) Design MethodFinal Paper

Huolin Huang*, Zhonghao Sun

Plenary Track > Device characterization and modeling

4H-SiC Light Triggered Thyristor with Gradually Doped Thin n-baseFinal Paper

Xi Wang, Hongbin Pu*

Plenary Track > Device characterization and modeling

A Lateral SiC SBD Temperature Sensor with Barrier Height InhomogeneitiesFinal Paper

Gu hang*

Plenary Track > Device characterization and modeling

Transient Thermal Characteristics of Power Modules under Extreme Operation ConditionsFinal Paper

晶格 胡*

Plenary Track > Device characterization and modeling

Online Junction Temperature Estimation using Integrated Temperature Sensor for SiC ModulesFinal Paper

Ping Liu*, Xing Zhang, Haoze Luo, Huai Wang, Frede Blaabjerg

Plenary Track > Device characterization and modeling

GaN-based enhancement-mode FinFET with double-channel AlGaN/GaN heterostructureFinal Paper

Chong Wang*, Xin Wang

Plenary Track > Device characterization and modeling