Introduction

The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.

The 21st SISPAD conference will be held on September 6-8, 2016 in Nuremberg, Germany.

Call for paper

Important date

2016-04-15
Abstract submission deadline
2016-06-10
Abstract notification of acceptance
2016-07-05
Draft paper submission deadline

Submission Topics

  • Process simulation and modeling

  • Equipment simulation

  • Material modeling

  • Electronic transport in semiconductor materials and devices

  • Device simulation

  • Interconnect modeling and algorithms

  • Models of VLSI device scaling limits

  • Compact modeling for circuit simulation

  • Integration of process, device and circuit simulation

  • Simulation of variability

  • Advanced numerical methods and algorithms

  • Fundamental aspects of device modeling and simulation

  • Benchmarking, calibration and verification of simulators

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Important Date

  • Conference Date

    Sep 06

    2016

    to

    Sep 08

    2016

  • Apr 15 2016

    Abstract Submission Deadline

  • Jun 10 2016

    Abstract Notification of Acceptance

  • Jul 05 2016

    Draft paper submission deadline

  • Sep 08 2016

    Registration deadline

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IEEE
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