IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

Thermal performance and reliability of high temperature SiC die attachments on direct cooling stacked Si3N4 substratesFinal Paper

Jingru Dai*, Bassem Mouawad, Jianfeng Li, Mark Johnson

Plenary Track > Harsh environment (e.g. high temperature) operation and reliability

Novel Silicon Carbide Integrated Power Module for EV applicationFinal Paper

Bassem Mouawad*, Jordi Espina, Jianfeng Li, Lee Empringham, christopher Johnson

Plenary Track > Packaging, power modules, and ICs

A Near Ideal Edge Termination Technique for Ultrahigh-Voltage 4H-SiC Devices with Multi-Zone Gradient Field Limiting RingFinal Paper

Xiaochuan Deng*

Plenary Track > Device structures and fabrication techniques

Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77KFinal Paper

Qing Zhu, Xiaohua Ma*

Plenary Track > Harsh environment (e.g. high temperature) operation and reliability

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMTFinal Paper

Bin Hou*

Plenary Track > Device structures and fabrication techniques

The Thin Plate Heat Pipe Koch Fractal Wick Structures InvestigationFinal Paper

Jun Liu, Zhenyu Wang*, Binbin Jiao, Yunqian Song, Rong Gao, Quan Hu

Plenary Track > Packaging, power modules, and ICs

Optical Coherence Tomography-Based IGBT Non-Destructive TestingFinal Paper

ZHIYI ZHAO*, Yihua Hu, Yaochun Shen, Chengmin Li, Wuhua Li, Weifeng Hu

Plenary Track > Packaging, power modules, and ICs

Influence of the oxygen in Hot-Carrier-Stress-Induced degradation in AlGaN/GaN high electron mobility transistorsFinal Paper

Lixiang Chen*

Plenary Track > Device characterization and modeling

Non-Magnetic Resonant-Type High-Frequency High-Voltage Power Conversion with Silicon Carbide Power Semiconductor DevicesFinal Paper

Chen Yu*, Mao Saijun, Li Chengmin, Li Wuhua, He Xiangning, Jelena Popovic, Jan Ferreira

Plenary Track > Harsh environment (e.g. high temperature) operation and reliability

Instability of 4H-SiC Power Device under Repetitive Avalanche Current StressFinal Paper

Plenary Track > Device characterization and modeling

Comparative Packaging Evaluation and Failure Mode Analysis of SiC, Si, and Hybrid Power ModulesFinal Paper

Plenary Track > Packaging, power modules, and ICs

Simulation Study Of An Injection Enhanced SiC IGBTFinal Paper

Shan Jiang, Xiao-Yan Tang*, Qingwen Song, Yuming ZHANG

Plenary Track > Device structures and fabrication techniques

Characterization of SiC MOSFET Switching PerformanceFinal Paper

Plenary Track > Device characterization and modeling

Damping Current Oscillation of SiC JFET Bi-directional Switches during Turn-on TransientFinal Paper

Lina Wang*, Junyi Yang, Xiangcai Zhang, Haobo Ma, Kabir Oladele Olanrewaju

Plenary Track > Hard-switched and soft-switched applications

Two Stage eGaN FET-Based Isolated Class E DC-DC ConverterFinal Paper

jiandong dai*, ying li, xinbo ruan

Plenary Track > Hard-switched and soft-switched applications