IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia 2018)

Quantitative Analysis and Suppression Strategies of Dvdt Induced Turn-on of Cascode GaN FETs in Half-bridge CircuitsFinal Paper

Tianhua ZHU*, Fang ZHUO, Feng WANG, Hailin WANG, Xiaoping SUN, shuhuai SHI, Baohui MA

Plenary Track > Device characterization and modeling

High Breakdown Field AlGaN/GaN HEMT with AlN Super Back BarrierFinal Paper

Yanmin Guo, Yulong Fang*, Jiayun Yin, Bo Wang, Zhirong Zhang, Jia Li, Weili Lu, Nan Gao, Zhihong Feng

Plenary Track > Device structures and fabrication techniques

An Asynchronous-Switched-Capacitor DC-DC Converter Based on GaN and SiC DevicesFinal Paper

Lin Fan*, Arnold Knott, Ivan Jørgensen, Christian Lumby

Plenary Track > Very high efficiency and compact converters

Failure Models of SiC MOSFET and SiC JFETFinal Paper

Yuming Zhou*

Plenary Track > Device characterization and modeling

Simulation of a Short-Channel 4H-SiC UMOSFET with Buried p Epilayer for Low Oxide Electric Field and Switching LossFinal Paper

Shen Zhanwei, Zhang Feng*

Plenary Track > Device characterization and modeling

A Study of the Performances Degradation for 4H-SiC Traps-stressed UMOSFET using Experimental and Simulation MethodsFinal Paper

shen zhanwei*

Plenary Track > Device characterization and modeling

SiC Trench IGBT with a UV-Shaped GateFinal Paper

Zhengxin Wen, Feng Zhang*, Zhanwei Shen, Guoguo Yan, Xingfang Liu, Guosheng Sun, Yiping Zeng

Plenary Track > Device structures and fabrication techniques

Gate drive Design for a Hybrid Si IGBT/SiC MOSFET ModuleFinal Paper

Puqi Ning*, Lei Li

Plenary Track > Packaging, power modules, and ICs

Demonstration of GaN pn junction by implanting fluorine ions into free-standing bulk substrate n-GaNFinal Paper

Plenary Track > Device structures and fabrication techniques

A Well-Designed High Power Density Single-Phase Inverter Power Module Using E-Mode GaN HEMTsFinal Paper

Plenary Track > Very high efficiency and compact converters

Study on the New Structure of SiGe HBT with Field PlateFinal Paper

Plenary Track > Device structures and fabrication techniques

IGCT Circuit Model Based on Pspice Modeling PlatformFinal Paper

yang song , cailin wang*

Plenary Track > Device characterization and modeling

Ultra-Fast Short Circuit Protection Solutions for E-mode GaN HEMTFinal Paper

He Li*, Xintong Lyu, Jin Wang

Plenary Track > Gate drive and other auxiliary circuits

Common Mode Votage Compensation for 7kV SiC-based Modular Multilevel Converter to Reduce Capacitor Voltage RippleFinal Paper

Ziwei Ke*, Jianyu Pan

Plenary Track > Applications in renewable energy and storage, transportation, industrial drives, and grid power

Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologiesFinal Paper

Meng Zhang*

Plenary Track > Device characterization and modeling