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Introduction

A global high level forum aiming at promoting collaborative innovation of the whole industry chain including wide band gap semiconductor materials, equipments, devices and related application sponsored by China Advanced Semiconductor Industry Innovation Alliance (CASA). This forum will focus on roadmap, application needs, integrated innovation of wide bandgap semiconductor technology and other contents, divided into several chapters to make in-depth discussion.

Call for paper

Important date

2016-07-15
Abstract submission deadline
2016-09-25
Draft paper submission deadline
2016-10-15
Draft paper acceptance notification
2016-10-28
Final paper submission deadline

Submission Topics

 

1. SiC Power Electronic Devices Technology

  • SiC Substrate Growth Technology

  • SiC Homo-epitaxial Growth Technology

  • SiC Material Defects and Characterization

  • SiC Power Electronic Devices Technology

  • Reliability Issues in SiC Power Electronic Devices 

  • Packaging for SiC Power Electronic Devices

  • SiC Power Electronics Application

  • Market Research for SiC Power Electronic Technology

2. Power Electronic Devices based on GaN and other wide band-gap semiconductors

  • GaN Based Heterostructure Epitaxial Growth and Defects, and Stress Control on Large Size Substrate

  • GaN based Power Electronic Devices Technology

  • GaN substrate Meterials and Homogeneous Epitaxial with Thick Film

  • Reliability of GaN Power Electronic Devices

  • GaN Device Packaging Technology

  • GaN Power Electronics Application

  • Market Research of GaN Power Electronic Technology

  • Other Electronic Materials and Devices of Wide Bandgap Semiconductor

3. Wide Bandgap Semiconductors and a new generation of Mobile Communication Technology

  • High Efficiency GaN Microwave Wave Device Technology

  • Reliability of GaN Microwave Device

  • GaN Epitaxial Technology for High Efficiency Microwave Device

  • GaN Monolithic Microwave IC Design

  • Big Signal Equivalent Circuit Modeling and Physical Modeling of GaN Microwave Devices

  • Wide Band, High Efficiency, Linear Power Amplifier Design for Mobile Communication

4. Wide Bandgap Semiconductors and Solid-State Ultraviolet Devices

  • Wide Bandgap Semiconductor Ultraviolet Luminescent Material and Novel Substrate

  • Wide Bandgap Semiconductor Ultraviolet Detecting Material

  • Design and Growth of High Efficient Quantum Structure

  • High Efficiency Solid State Ultraviolet Light Emitting Device

  • High Sensitivity Ultraviolet Detection and Imaging Device

  • Light Extraction, Thermal Management and Reliability of UV Packaging and Modules

  • New Progress of Ultraviolet Light Source and Detection Application

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Important Date
  • Conference Date

    Nov 15

    2016

    to

    Nov 17

    2016

  • Jul 15 2016

    Abstract Submission Deadline

  • Sep 25 2016

    Draft paper submission deadline

  • Oct 15 2016

    Draft Paper Acceptance Notification

  • Oct 28 2016

    Final Paper Deadline

  • Nov 17 2016

    Registration deadline

Sponsored By
hina Solid-State Lighting Alliance (CSA)