Introduction

The 17th International Workshop on Junction Technology (IWJT2017) will be held on June 1 - 2, 2017 in Kyoto, Japan. Since started in 2000, IWJT has been held annually in Japan or China. IWJT is an open forum focused on the needs and interests of the community on junction formation technology in semiconductors. In previous IWJTs, a number of eminent and experienced scientists and engineers from Asia, America and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their latest research results, and exchange ideas with leading scientists.

Call for paper

Important date

2017-04-14
Abstract submission deadline

Submission Topics

Papers are solicited in, but not limited to the following

  • Doping Technology --- Ion implantation, plasma doping, gas and solid doping

  • Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, new activation annealing, lattice damage and defects

  • Junction Technology for Devices --- CMOS devices, Power devices, Image sensors, Solar cells, etc.

  • Silicide and Contact Technology --- Silicide materials and salicide technology, embedded and elevated S/D, low barrier contact, surface pre-treatment

  • Characterization for Shallow Junction --- Physical and electrical characterization of junctions for 2D and 3D structures

  • Modeling and Simulation --- Modeling and simulation of shallow junction formation of CMOS

  • Advanced Equipment, Materials and Substrates for Junction Technologies

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Important Date

  • Conference Date

    Jun 01

    2017

    to

    Jun 02

    2017

  • Apr 14 2017

    Abstract Submission Deadline

  • Jun 02 2017

    Registration deadline

Sponsored By
IEEE Electron Devices Society
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