2018 18th International Workshop on Junction Technology (IWJT)

Workshop Scope (Papers are solicited in, but not limited to
the following areas)
 Doping Technology --- Ion implantation, plasma
doping, gas and solid doping
 Annealing Technology --- Rapid thermal process, laser
annealing, flash annealing, SPE, lattice damage and
defects
 Junction Technology for Novel CMOS Device
Structures --- Junction for SOI, strained Si, SiGe, Ge,
Schottky barrier S/D MOSFET, FinFET(Tri-gate FET),
and bonding junctions.
 Silicides and Contact Technology for CMOS ---
Silicide materials and salicide technology, elevated S/D,
low barrier contact, surface pre-treatment
 Junction and Contact Technologies for Compound
Semiconductors and Novel Material Devices ---
Schottky and ohmic contacts to wide bandgap
compound semiconductors, junction and contact
technologies for carbon nanotube, graphene and other
2D or nano-, quantum devices, hetero-junction devices
 Contact and Junction Technologies for Energy
Harvesting Devices---solar cells
 Characterization for Shallow Junction (1D, 2D) ---
Physical and electrical characterization of ultra-shallow
junction formation, dopant incorporation/activation,
dopant profiling/mapping, novel characterization
techniques
 Modeling and Simulation --- Modeling and simulation
of ultra-shallow junction formation, modeling of novel
junction-structure CMOS devices and non-Si based
devices
 Equipment, Materials and Substrates for Junction
Technology