16th International Workshop on Junction Technology (IWJT)

Workshop Scope

• (Papers are solicited in, but not limited to the following)
• Doping Technology --- Ion implantation, plasma doping, gas and solid doping
• Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects
• Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, and FinFET(Tri-gate FET)
• Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment
• Junction and Contact Technologies for Compound Semiconductors and Quantum Devices --- Schottky and ohmic contacts to wide bandgap compound semiconductors, junction and contact technologies for carbon nanotube, graphene, 2D material and other 2D or nano-, quantum devices, hetero-junction devices
• Contact and Junction Technologies for Energy Harvesting Devices---solar cells
• Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction
• Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS
• Equipment, Materials and Substrates for Junction Technology