Presentation List

Modeling and Analysis of the Switching Characteristics Difference for Paralleling SiC MOSFETs in Multichip Power Modules

Wenyu Li Fudan University； China； Shanghai； 200433

P /P3 2021-08-27 12:30 ~ 12:35

PUBLIC Poster Presentation

Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN Rectifier

Mengling Tao University of Electronic Science and Technology of China

P /P3 2021-08-27 12:05 ~ 12:10

PUBLIC Poster Presentation

Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions

Yu Sun Institute of Microelectronics； Peking University；Chun Han Peking University

P /P3 2021-08-27 12:00 ~ 12:05

PUBLIC Poster Presentation

An Integrated GaN-Based Power Module Based on the Cooling-System-Inductor Structure

Longyang Yu Xi'an Jiaotong University

P /P5 2021-08-27 13:25 ~ 13:30

PUBLIC Poster Presentation

A Survey on Modeling of SiC IGBT

Yuwei Wu Xi’an Jiaotong University

P /P3 2021-08-27 12:40 ~ 12:45

PUBLIC Poster Presentation

A GaN-based High Power-density Power Optimizer for Solar-powered Aircraft Applications

peng chen Nanjing University of Aeronautics and Astronautics；College of Automation

P /P5 2021-08-27 12:10 ~ 12:15

PUBLIC Poster Presentation

Influence of CucorAl wire bonding on reliability of SiC devices

Fang Chao Zhuzhou CRRC Times Semiconductor Co., Ltd.

P /P4 2021-08-27 12:25 ~ 12:30

PUBLIC Poster Presentation

The Method for Decoupling the Parasitic Inductance of the Laminated Busbar with SiC MOSFETs in Parallel

Shaolin Yu HeFei University of Technology

P /P2 2021-08-27 12:25 ~ 12:30

PUBLIC Poster Presentation

EMI Noise Reduction in GaN-based Full-bridge LLC Converter

Yue Cao Student Xi'an Jiaotong University

P /P4 2021-08-27 12:50 ~ 12:55

PUBLIC Poster Presentation

The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC

Ruijun Zhang Xiamen University；Department of Physics

P /P1 2021-08-27 12:10 ~ 12:15

PUBLIC Poster Presentation

IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WIPDA-ASIA 2021)

Modeling and Analysis of the Switching Characteristics Difference for Paralleling SiC MOSFETs in Multichip Power Modules

Design, Fabrication and Characterization of 6.5 kV/100A 4H-SiC PiN Rectifier

Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions

An Integrated GaN-Based Power Module Based on the Cooling-System-Inductor Structure

A Survey on Modeling of SiC IGBT

A GaN-based High Power-density Power Optimizer for Solar-powered Aircraft Applications

Influence of CucorAl wire bonding on reliability of SiC devices

The Method for Decoupling the Parasitic Inductance of the Laminated Busbar with SiC MOSFETs in Parallel

EMI Noise Reduction in GaN-based Full-bridge LLC Converter

The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC

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